Semiconductor device and manufacturing method of semiconductor device

ABSTRACT

A manufacturing method of a semiconductor device according to a disclosed embodiment includes: implanting a first impurity into a first region of a semiconductor substrate, forming a semiconductor layer on the semiconductor substrate, forming a trench in the semiconductor layer and the semiconductor substrate, forming an isolation insulating film in the trench, implanting a second impurity into a second region of the semiconductor layer, forming a first gate insulating film and a first gate electrode in the first region, forming a second gate insulating film and a second gate electrode in the second region, forming a first source region and a first drain region at both sides of the first gate electrode, and forming a second source region and a second drain region at both sides of the second gate electrode.

CROSS-REFERENCE TO RELATED APPLICATION

This application is based upon and claims the benefit of priority of theprior Japanese Patent Application No. 2012-172696, filed on Aug. 3,2012, the entire contents of which are incorporated herein by reference.

FIELD

The embodiments discussed herein are related to a semiconductor deviceand a manufacturing method of a semiconductor device.

BACKGROUND

A semiconductor device such as an LSI includes various MOS (Metal oxideSemiconductor) transistors. Impurities for adjusting the thresholdvoltage are implanted into channels of these MOS transistors. However,the impurities are not homogeneously distributed in the channels. Thiscauses a positional variation of the impurities. Such a variation iscalled RDF (Random Dopant Fluctuation).

In the generation having a long gate length, the RDF has a smallinfluence on the threshold voltage. However, the threshold voltagebecomes more sensitive to the RDF as the gate length becomes shorter.The threshold voltage easily varies due to the RDF.

In order to suppress the variation of the threshold voltage due to theRDF, it is effective to use as a channel a non-doped epitaxial siliconlayer with the low impurity concentration.

Further, the MOS transistor which uses such a non-doped epitaxialsilicon layer still has room for improvement in the performance. Notethat, the technologies related to the present application are disclosedin Japanese Laid-open Patent Publications Nos. 2012-79743, 2002-9170,and S63-169059.

SUMMARY

According to one aspect of the embodiments below, there is provided amanufacturing method of a semiconductor device, including implanting afirst impurity into a first region of a semiconductor substrateincluding the first region and a second region, forming a semiconductorlayer on the upper surface of the semiconductor substrate, forming atrench in the semiconductor layer and the semiconductor substrate,forming an isolation insulating film in the trench, implanting a secondimpurity into the semiconductor layer in the second region, forming afirst gate insulating film on the semiconductor layer in the firstregion, forming a second gate insulating film on the semiconductor layerin the second region, forming a first gate electrode on the first gateinsulating film, forming a second gate electrode on the second gateinsulating film, forming a first source region and a first drain regionin the semiconductor layer at both sides of the first gate electrode,the first source region and the first drain region having a conductivitytype opposite to a conductivity type of the first impurity, and forminga second source region and a second drain region in the semiconductorlayer at both sides of the second gate electrode, the second sourceregion and the second drain region having a conductivity type oppositeto a conductivity type of the second impurity.

The object and advantages of the invention will be realized and attainedby means of the elements and combinations particularly pointed out inthe claims.

It is to be understood that both the foregoing general description andthe following detailed description are exemplary and explanatory and arenot restrictive of the invention.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1A to 1R are cross-sectional views of semiconductor devices usedfor evaluation in the course of manufacturing semiconductor devices;

FIG. 2 illustrates Vg-Id curves of an NMOS transistor included in asemiconductor device used for evaluation;

FIG. 3 illustrates Vg-Id curves of an PMOS transistor included in thesemiconductor device used for evaluation;

FIG. 4 is a plan view of the NMOS transistor included in thesemiconductor device used for evaluation;

FIG. 5A is a cross-sectional view along a Y-Y line in FIG. 4, and FIG.5B is a cross-sectional view of an element isolation trench with arounded shoulder portion;

FIGS. 6A to 6G are cross-sectional views of semiconductor devices in thecourse of manufacturing semiconductor devices according to a firstembodiment;

FIG. 7A illustrates Vg-Id curves of a third MOS transistor according toa comparative example, FIG. 7B illustrates Vg-Id curves of the third MOStransistor according to the first embodiment;

FIG. 8 illustrates Vg-Id curves of the third MOS transistor in a casewhere BF₂ is used as a p-type impurity in formation of a second p-typeimpurity region in the first embodiment;

FIG. 9 illustrates a concentration profile of impurity of asemiconductor layer in a second n-type transistor formation region;

FIGS. 10A to 10C are graphs obtained as a result of examination of how aVg-Id curve of a first MOS transistor changes depending on the doseamount of carbon which is ion implanted into a first p-type impurityregion in the first embodiment;

FIG. 11 is a graph obtained as a result of examination of how theconcentration profile of boron in the first p-type impurity regiondepends on the condition of ion implantation of carbon in the firstembodiment;

FIGS. 12A to 12D are graphs indicating Vg-Id curves of the first MOStransistor obtained by varying the film thickness of the semiconductorlayer in the first embodiment;

FIG. 13A to 13Q are cross-sectional views of semiconductor devices inthe course of manufacturing semiconductor devices according to a secondembodiment; and

FIG. 14 illustrates a concentration profile of impurity in a thirdn-type transistor formation region in the second embodiment.

DESCRIPTION OF EMBODIMENTS

Prior to explanation for the present embodiments, evaluation resultsperformed by the inventor of the present application will be explained.

FIGS. 1A to 1R are cross-sectional views of semiconductor devices usedfor the evaluation in the course of manufacturing semiconductor devices.The semiconductor device uses a semiconductor layer formed by anepitaxial growth method as a channel, and is manufactured as follows.

Firstly, as illustrated in FIG. 1A, a silicon substrate provided with afirst region I and a second region II is prepared as a semiconductorsubstrate 1.

Of these regions, the first region I is a region where a low-voltagetransistor is to be formed, and is subdivided into a first p-typetransistor formation region I_(p) and a first n-type transistorformation region I_(n). Meanwhile, the second region II is a regionwhere a high-voltage transistor is to be formed, and is subdivided intoa second p-type transistor formation region II_(p) and a second n-typetransistor formation region II_(n).

Further, an upper surface 1 x of the semiconductor substrate 1 ispatterned to form an alignment mark 1 a. The alignment mark 1 a is usedin each photolithography process, which is described later, foralignment between an exposure device and the semiconductor substrate 1.

Thereafter, the upper surface 1 x of the semiconductor substrate 1 isthermally oxidized or is immersed into a solution containing anoxidizing agent to form an oxide film 2 having a thickness of about 0.5nm to 10 nm.

Next, as illustrated in FIG. 1B, a first resist film 4 is formed on theoxide film 2 by photolithography. Further, a first p well 6 and a firstp-type impurity region 8 are formed in the first n-type transistorformation region I_(n) by ion implantation using the first resist film 4as a mask.

The first p well 6 is formed by ion implantation of boron as a p-typeimpurity into the semiconductor substrate 1 from the four directionstilted with respect to the substrate normal direction under thecondition where the acceleration energy is 150 keV and the dose amountis 7.5×10¹² cm⁻².

Moreover, the first p-type impurity region 8 functions to adjust thethreshold voltage of a transistor to be formed later in the first n-typetransistor formation region I_(n), and is formed by ion implantation ofgermanium, carbon, and a p-type impurity in this order.

Among them, the ion implantation of germanium is performed under thecondition where the acceleration energy is 50 keV and the dose amount is5×10¹⁴ cm⁻², and the ion implantation of carbon is performed under thecondition where the acceleration energy is 5 keV and the dose amount is5×10¹⁴ cm⁻². Further, the ion implantation of the p-type impurity isperformed such that boron is implanted under the condition where theacceleration energy is 20 keV and the dose amount is 1×10¹³ cm⁻² andboron is implanted under the condition where the acceleration energy is10 keV and the dose amount is 1×10¹³ cm⁻². In addition, boron difluoride(BF₂) as a p-type impurity is ion implanted under the condition wherethe acceleration energy is 10 keV and the dose amount is 1×10¹³ cm⁻².

Performing the ion implantation of germanium firstly in this mannerresults in an amorphous surface layer of the semiconductor substrate 1.This prevents channeling of boron, and makes it more likely that carbonis arranged in lattice points of the semiconductor substrate 1. Then,the carbon arranged in the lattice points functions to suppressdiffusion of boron.

Moreover, the first p-type impurity region 8 formed in this manner alsofunctions to prevent punch through, in addition to the function ofadjusting the threshold voltage of the transistor.

Thereafter, the first resist film 4 is removed.

Next, as illustrated in FIG. 1C, a second resist film 10 is formed onthe oxide film 2 by photolithography, and a first n well 12 and a firstn-type impurity region 14 are formed in the first p-type transistorformation region I_(p) by ion implantation using the second resist film10 as a mask.

The first n well 12 is formed by ion implantation of phosphorus as ann-type impurity into the semiconductor substrate 1 from the fourdirections tilted with respect to the substrate normal direction underthe condition where the acceleration energy is 360 keV and the doseamount is 7.5×10¹² cm⁻².

Moreover, the first n-type impurity region 14 functions to adjust thethreshold voltage of a transistor to be formed later in the first p-typetransistor formation region I_(p), and is formed by ion implantation ofantimony as an n-type impurity. The antimony is implanted at a pluralityof times under the following conditions. The first condition is that theacceleration energy is 130 keV and the dose amount is 0.6×10¹³ cm⁻², thesecond condition is that the acceleration energy is 80 keV and the doseamount is 0.9×10¹³ cm⁻², and the third condition is that theacceleration energy is 20 keV and the dose amount is 1×10¹³ cm⁻².

Thereafter, the second resist film 10 is removed.

Subsequently, as illustrated in FIG. 1D, a third resist film 16 isformed on the oxide film 2 by photolithography. Further, a second p well18 and a second p-type impurity region 20 are formed in the secondn-type transistor formation region II_(n) by ion implantation using thethird resist film 16 as a mask.

The second p well 18 is formed by ion implantation of boron as a p-typeimpurity into the semiconductor substrate 1 from the four directionstilted with respect to the substrate normal direction under thecondition where the acceleration energy is 150 keV and the dose amountis 7.5×10¹² cm⁻².

Meanwhile, the second p-type impurity region 20 functions to adjust thethreshold voltage of a transistor to be formed later in the secondn-type transistor formation region II_(n), and is formed by ionimplantation of boron under the condition where the acceleration energyis 10 keV and the dose amount is 2×10¹² cm⁻².

Thereafter, the third resist film 16 is removed.

Next, as illustrated in FIG. 1E, a fourth resist film 22 is formed onthe oxide film 2 by photolithography, and a second n well 24 and asecond n-type impurity region 26 are formed in the second p-typetransistor formation region II_(p) by ion implantation using the fourthresist film 22 as a mask.

The second n well 24 is formed by ion implantation of phosphorus as ann-type impurity into the semiconductor substrate 1 from the fourdirections tilted with respect to the substrate normal direction underthe condition where the acceleration energy is 360 keV and the doseamount is 7.5×10¹² cm⁻².

Moreover, the second n-type impurity region 26 functions to adjust thethreshold voltage of a transistor to be formed later in the secondp-type transistor formation region II_(p), and is formed by ionimplantation of arsenic as an n-type impurity. The implantationcondition of the arsenic is that the acceleration energy is 100 keV andthe dose amount is 1×10¹² cm⁻².

Moreover, phosphorus may be used as an n-type impurity.

Thereafter, the fourth resist film 22 is removed.

Next, steps to obtain a cross-sectional structure illustrated in FIG. 1Fwill be explained.

Firstly, thermal treatment is performed with respect to thesemiconductor substrate 1 in an inert atmosphere to recrystallize theamorphous layer generated in the semiconductor substrate 1 by the ionimplantation of the germanium described above. For example, in anitrogen atmosphere, thermal treatment is performed at 600° C. for 150seconds, and then thermal treatment is performed at 1000° C. for 0.1second.

Next, the oxide film 2 having been damaged by each ion implantation inFIGS. 1B to 1E is removed by wet etching with a hydrofluoric acidsolution.

Further, on the upper surface 1 x of the semiconductor substrate 1, anon-doped silicon layer serving as a semiconductor layer 28 is formed insuch a manner to have a thickness of about 25 nm by an epitaxial growthmethod using a mixed gas of a silane (SiH₄) gas and a hydrogen gas as adeposition gas.

Subsequently, as illustrated in FIG. 1G, the surface of thesemiconductor layer 28 is oxidized to form an oxide film 30 having athickness of approximately 3 nm. In addition, a silicon nitride film 32is formed in such a manner to have a thickness of approximately 70 nm onthe oxide film 30 by a CVD method.

Further, openings 32 a are formed in the oxide film 30 and the siliconnitride film 32 by the photolithography method, and in addition, thesemiconductor layer 28 and the semiconductor substrate 1 are dry-etchedto form element isolation trenches 1 b between the regions I_(n), I_(p),II_(n), and II_(p).

Next, as illustrated in FIG. 1H, an oxidized silicon film serving as anelement isolation insulating film 34 is formed in the element isolationtrenches 1 b and on the silicon nitride film 32 by a high-density plasmaCVD method, and the element isolation trenches 1 b are entirely filledwith the element isolation insulating film 34.

Subsequently, as illustrated in FIG. 1I, the redundant element isolationinsulating film 34 on the silicon nitride films 32 is polished andremoved by a CMP (Chemical Mechanical Polishing) method to leave theelement isolation insulating film 34 only in the element isolationtrenches 1 b.

Thereafter, the upper surface of the element isolation insulating film34 is lowered by wet etching using a hydrofluoric acid solution.

The first p-type transistor formation region I_(p), the first n-typetransistor formation region I_(n), the second p-type transistorformation region II_(p), and the second n-type transistor formationregion II_(n) described above are electrically isolated from one anotherby the element isolation insulating film 34.

Next, as illustrated in FIG. 1J, the silicon nitride film 32 is removedby wet etching with a hot phosphoric acid.

Next, as illustrated in FIG. 1K, after the oxide film 30 described aboveis wet etched with the hydrofluoric acid solution, the surface of thesemiconductor layer 28 is thermally oxidized to form a first thermaloxide film 36 having a thickness of approximately 7 nm. The firstthermal oxide film 36 is an example of a second gate insulating film,and is formed under the condition where the substrate temperature is at750° C. and the thermal treatment time is for 52 minutes.

Next, as illustrated in FIG. 1L, a fifth resist film 38 which covers thesecond region II is formed on the first thermal oxide film 36. Further,the fifth resist film 38 is used as a mask to remove the first thermaloxide film 36 in the first region I by wet etching with a hydrofluoricacid solution.

After completion of the wet etching, the fifth resist film 38 isremoved.

Thereafter, as illustrated in FIG. 1M, the surface of the semiconductorlayer 28 is thermally oxidized again by RTO (Rapid Thermal Oxidation) toform a second thermal oxide film 40 having a thickness of about 2 nm inthe first region I. The second thermal oxide film 40 is an example of afirst gate insulating film.

Moreover, the condition where the substrate temperature is at 810° C.and the thermal treatment time is for eight seconds is employed as thedeposition condition of the second thermal oxide film 40.

At this step, the thermal oxidation increases the thickness of the firstthermal oxide film 36. Thus, the first thermal oxide film 36 having afilm thickness thicker than the second thermal oxide film 40 isobtained.

Thereafter, as illustrated in FIG. 1N, each polycrystalline silicon filmhaving a film thickness of about 100 nm is formed on each of the firstthermal oxide film 36 and the second thermal oxide film 40 by the CVDmethod. Further, the polycrystalline silicon films are patterned to formfirst gate electrodes 42 a in the first region I, and to simultaneouslyform second gate electrodes 42 b in the second region II.

Next, steps to obtain a cross-sectional structure illustrated in FIG. 10will be explained.

Firstly, phosphorus as an n-type impurity is ion implanted into thesecond n-type transistor formation region II_(n) to form second n-typeextensions 48 at both sides of the second gate electrode 42 b in thesemiconductor layer 28. The condition of the ion implantation is that,for example, the acceleration energy is 35 keV and the dose amount is3×10¹³ cm⁻².

Next, arsenic as an n-type impurity is ion implanted into the firstn-type transistor formation region I_(n) to form first n-type extensions44 at both sides of the first gate electrode 42 a in the semiconductorlayer 28. The condition of the ion implantation is that, for example,the acceleration energy is 1 keV and the dose amount is 8×10¹⁴ cm⁻².

Subsequently, under the condition where the acceleration energy is 0.3keV and the dose amount is 4×10¹⁴ cm⁻², boron as a p-type impurity ision implanted into the first p-type transistor formation region I_(p)and the second p-type transistor formation region II_(p). Therefore,first p-type extensions 46 are formed at both sides of the first gateelectrode 42 a in the semiconductor layer 28, and second p-typeextensions 50 are simultaneously formed at both sides of the second gateelectrode 42 b in the semiconductor layer 28.

Note that, the p-type impurity and the n-type impurity described aboveare separately ion implanted using resist films which are notillustrated.

Next, as illustrated in FIG. 1P, an insulating film is formed in each ofthe first region I and the second region II, and the insulating film isetched back by RIE (Reactive Ion Etching) leaving the insulating film onsides of each of the first gate electrode 42 a and the second gateelectrode 42 b as insulating side walls 60. As the insulating film, anoxidized silicon film having a film thickness of approximately 80 nm andformed under the condition where the substrate temperature is at 520° c.is employed.

Moreover, in the etching back described above, portions of the firstthermal oxide film 36 and the second thermal oxide film 40 which are notcovered by the gate electrodes 42 a and 42 b and the insulating sidewalls 60 are also etched. Accordingly, after the completion of theetching back, the surface of the semiconductor layer 28 is exposed.

Next, steps to obtain a cross-sectional structure illustrated in Fig.FIG. 1Q will be explained.

Firstly, phosphorus as an n-type impurity is ion implanted into each ofthe first n-type transistor formation region I_(n) and the second n-typetransistor formation region II_(n).

With this, a first n-type source region 62 and a first n-type drainregion 64 are formed at both sides of the first gate electrode 42 a inthe semiconductor layer 28 in the first n-type transistor formationregion I. Further, simultaneously with this, a second n-type sourceregion 70 and a second n-type drain region 72 are formed at both sidesof the second gate electrode 42 b in the semiconductor layer 28 in thesecond n-type transistor formation region II_(n).

As for the condition of the ion implantation, for example, the conditionwhere the acceleration energy is 8 keV and the dose amount is 1.2×10¹⁶cm⁻² may be employed.

Next, boron as a p-type impurity is ion implanted into each of the firstp-type transistor formation region I_(p) and the second p-typetransistor formation region II_(p).

With the ion implantation, a first p-type source region 66 and a firstp-type drain region 68 are formed at both sides of the first gateelectrode 42 a in the semiconductor layer 28 in the first p-typetransistor formation region I_(p). Further, simultaneously with this, asecond p-type source region 74 and a second p-type drain region 76 areformed at both sides of the second gate electrode 42 b in thesemiconductor layer 28 in the second p-type transistor formation regionII_(p).

As for the condition of the ion implantation, for example, the conditionwhere the acceleration energy is 4 keV and the dose amount is 6×10¹⁵cm⁻² may be employed.

Note that, the p-type impurity and the n-type impurity described aboveare separately ion implanted using resist films which are notillustrated.

Thereafter, under the condition where the substrate temperature is at1025° c., the semiconductor substrate 1 is subjected to RTA (RapidThermal Anneal) to activate all the impurities described above.

With the foregoing steps, the basic structures of first to fourth MOStransistors 81 to 84 have been completed. Among these transistors, thefirst MOS transistor 81 and the third MOS transistor 83 are NMOStransistors, and the second MOS transistor 82 and the fourth MOStransistor 84 are PMOS transistors.

Moreover, the third and fourth MOS transistors 83 and 84 are driven bythe voltage higher than that of the first and second MOS transistors 81and 82. Accordingly, the first thermal oxide films 36 provided as gateinsulating films for these third and fourth MOS transistors 83 and 84have a film thickness thicker than the second thermal oxide film 40.

Next, steps to obtain a cross-sectional structure illustrated in Fig.FIG. 1R will be explained.

Firstly, a high-melting point metal layer such as a cobalt layer isformed in each of the first region I and the second region II by asputtering method. Further, the high-melting point metal layers areheated to be reacted with silicon to form metal silicide layers 78 atthe sides of each first gate electrode 42 a and each second gateelectrode 42 b on the semiconductor layer 28.

Thereafter, the unreacted high-melting point metal layers on theinsulating side walls 60 and the like are removed by wet etching.

Next, in each of the first region I and the second region II, a siliconnitride film having a thickness of approximately 50 nm and an oxidizedsilicon film having a thickness of approximately 50 nm are formed inthis order, and these laminate films serve as an interlayer insulatingfilm 79.

The silicon nitride film in the interlayer insulating film 79 is formedby the CVD method, for example, under the condition where the substratetemperature is at 600° C. Further, the oxidized silicon film on thesilicon nitride film is formed by a high-density plasma CVD method, forexample.

Thereafter, the upper surface of the interlayer insulating film 79 ispolished by a CMP method to be planarized.

Further, contact holes are formed in the interlayer insulating film 79using a photolithography method, and contact plugs 80 are embedded inthe contact holes. In addition, a copper wiring 85 connected to eachcontact plug 80 is formed to complete the basic structure of thesemiconductor device.

According to the example explained above, all the first to fourth MOStransistors 81 to 84 (see FIG. 1Q) use the semiconductor layer 28 as achannel.

The semiconductor layer 28 is non-doped when being formed. However,boron in the second p-type impurity region 20 diffuses into thesemiconductor layer 28 included in the third MOS transistor 83 due tothe heat in the steps after the semiconductor layer 28 has been formed.Therefore, the third MOS transistor 83 uses the semiconductor layer 28having a p-type conductivity by the diffused boron as a channel.

The structure of using a p-type semiconductor as a channel in thismanner is the same as an MOS transistor which uses a portion of asurface layer on the semiconductor substrate 1 as a channel, the surfacelayer being p-type doped, without the semiconductor layer 28 beingformed. Such MOS transistors are widely used. Therefore, an advantage ofcapable of using the third MOS transistor 83 in an existing circuitwithout the design of the circuit being changed may be obtained in thisexample.

Meanwhile, although the first MOS transistor 81 is also provided withthe first p-type impurity region 8, carbon to suppress diffusion ofboron is also ion implanted when the first p-type impurity region 8 isformed. Accordingly, the slightly small amount of boron is diffused intothe first p-type impurity region 8.

In addition, in the first region I, the step of ion implanting theimpurity into the semiconductor layer 28 is not performed between theperiod after the semiconductor layer 28 is formed and before the firstgate electrodes 42 a are formed. Accordingly, the first MOS transistor81 in the first region I uses the semiconductor layer 28 with an uppersurface 28 x in which boron is not substantially included and with thelow impurity concentration, as a channel.

Because the channel has a low impurity concentration in this manner, itis possible to prevent the threshold voltage of the first MOS transistor81 from varying due to the positional variation of the impurities (RDF).

In particular, having a gate length smaller than the third MOStransistor 83, the first MOS transistor 81 receives an influence on thethreshold voltage by the RDF. Accordingly, the first MOS transistor 81is effective, in particular, in preventing variation of the thresholdvoltage by forming the semiconductor layer 28 at a low impurityconcentration as described above.

Meanwhile, one of the characteristics of the MOS transistor is a hump.The hump indicates a small crest appeared on a Vg (gate voltage)-Id(drain current) curve of an MOS transistor.

The inventor of the present application examined the Vg-Id curve of thethird MOS transistor 83 made in accordance with FIGS. 1A to 1R describedabove.

FIG. 2 illustrates a result of the examination. In the examination, theVg-Id curves of a plurality of the third MOS transistors 83 are examinedin both cases where the voltage Vbb applied to the second p well 18 (seeFIG. 1Q) is 0.0 V and −3.3 V.

As illustrated in FIG. 2, humps appear on the Vg-Id curves of the thirdMOS transistors 83.

The appearance of the humps in this manner causes the Vg-Id curves ofthe plurality of the third MOS transistors 83 to vary from each other.This results in variation of a threshold voltage Vth or anoff-state-current Ioff among the third MOS transistors 83.

As described earlier, although the third MOS transistor 83 is an NMOStransistor, the inventor of the present application further examinedwhether such a hump is generated in the fourth MOS transistor 84 servingas a PMOS transistor.

FIG. 3 illustrates a result of the examination. In the examination, theVg-Id curves of a plurality of the fourth MOS transistors 84 areexamined in both cases where the voltage Vbb applied to the second nwell 24 is 0.0 V and +3.3 V.

As illustrated in FIG. 3, no hump such as that in FIG. 2 is generated inthe fourth MOS transistor 84 serving as a PMOS transistor.

The inventor of the present application studied the reason why a hump isgenerated only in the NMOS transistor and no hump is generated in thePMOS transistor in this manner as follows.

Firstly, a concept of segregation of impurities will be explained. In aninterface between Si and SiO, the concentration distribution of impuritysuch as B or As/P is discontinuous. In a case of B, the concentration ofB in Si becomes smaller than the concentration of B in SiO. In a case ofAs/P, the concentration of As/P in Si becomes larger. This is referredas segregation. It is understood the segregation is caused by thedifference of free energies between the cases where B is present in Siand in SiO. As a result, the concentration of B in Si is lowered towardthe interface with SiO.

The semiconductor layer 28 of the third MOS transistor 83 is doped withboron (B) as described above. Boron has a property of easily beingincorporated into the element isolation insulating film 34 and the firstthermal oxide film 36 due to the segregation. Accordingly, theconcentration of boron in a portion in the vicinity of the elementisolation insulating film 34 is lowered, lowering the threshold voltagein the portion. This causes a current to be flown in the portion even atthe low gate voltage. Therefore, it is considered that a hump isgenerated in the third MOS transistor 83.

Meanwhile, the semiconductor layer 28 of the fourth MOS transistor 84includes arsenic (As) or phosphorus (P) diffused from the second n-typeimpurity region 26 below the semiconductor layer 28. On the contrary toboron, the concentration of phosphorus in Si in the vicinity of theoxide film interface becomes larger. This results in a higher thresholdvoltage in the vicinity of the element isolation insulating film 34 thanother portions. Therefore, it is considered that no hump is generated inthe fourth MOS transistor 84.

In this manner, although it is considered that deviation of the impurityconcentration in the semiconductor layer 28 causes a hump, it is alsoconsidered that concentration of electric fields on a shoulder portionof the element isolation trenches 1 b causes a hump to be generated asdescribed below.

FIG. 4 is a plan view of the third MOS transistor 83, and FIG. 5A is across-sectional view along a Y-Y line in FIG. 4.

As illustrated in FIG. 5A, the element isolation trench 1 b has a rightangle shoulder portion 1 c. This causes an electric field E toconcentrate on the semiconductor layer 28 from the second gate electrode42 b. It is considered that this may cause a hump to be generated.

Therefore, as illustrated in FIG. 5B, it is considered that the shoulderportion 1 c is rounded off to ease the concentration of the electricfield E. The shoulder portion 1 c may be rounded off, for example, suchthat the shoulder portion 1 c of the element isolation trench 1 b isthermally oxidized at a high temperature of about 1000° C. before theelement isolation insulating film 34 is formed.

However, the thermal treatment at the high temperature on thesemiconductor substrate 1 in this manner causes boron in the firstp-type impurity region 8 of the first MOS transistor 81 (see FIG. 1Q) tobe diffused into the semiconductor layer 28. This increases the impurityconcentration in the semiconductor layer 28. Therefore, it is difficultto prevent the variation in the threshold voltage of the first MOStransistor 81 by using the semiconductor layer 28 having a lowconcentration.

Hereinafter, a manufacturing method of a semiconductor device capable ofpreventing a hump to be generated such that that the shoulder portion 1c is not necessary to be rounded off by the thermal oxidization at sucha high temperature will be explained.

First Embodiment

FIGS. 6A to 6G are cross-sectional views of semiconductor devices in thecourse of manufacturing semiconductor devices according to the presentembodiment. Note that, In FIGS. 6A to 6G, like numerals refer to likecomponents which have been explained in FIGS. 1A to 1R, and explanationsare omitted below.

Firstly, the same steps as FIGS. 1A to 1C described above are performedto obtain a cross-sectional structure illustrated in FIG. 6A.

In the state as illustrated in FIG. 6A, the first p well 6 and the firstp-type impurity region 8 stated above are formed in the semiconductorsubstrate 1 in the first n-type transistor formation region I_(n). Ashaving explained with reference to FIG. 1B, when the first p-typeimpurity region 8 is formed, carbon is also ion implanted into thesemiconductor substrate 1. The carbon may suppress diffusion of boroninto the first p-type impurity region 8.

Moreover, the first n well 12 and the first n-type impurity region 14are formed in the semiconductor substrate 1 in the first p-typetransistor formation region I_(p).

Next, as illustrated in FIG. 6B, the thermal oxide film 2 damaged duringthe formation of the first p well 6 or the first n well 12 is removed bywet etching with a hydrofluoric acid solution.

Further, in a state where no impurity is implanted into each of thesecond p-type transistor formation region II_(p) and the second n-typetransistor formation region II_(n), a silicon layer serving as thesemiconductor layer 28 is formed on the upper surface 1 x of thesemiconductor substrate 1.

The silicon layer is formed in such a manner to have a thickness ofabout 25 nm by the epitaxial growth method using a mixed gas of a silanegas and a hydrogen gas as a deposition gas, similar to the step of FIG.1F.

Next, as illustrated in FIG. 6C, the same steps as FIGS. 1G to 1J statedabove are performed to form an oxidized silicon film serving as theelement isolation insulating film 34 in the element isolation trenches 1b of the semiconductor substrate 1, and to be in a state where the oxidefilm 30 having a thickness about 3 nm is remained on the semiconductorlayer 28.

Subsequently, as illustrated in FIG. 6D, the third resist film 16 isformed on the oxide film 30 by photolithography. Further, the second pwell 18 and the second p-type impurity region 20 are formed in thesecond n-type transistor formation region II_(n) by ion implantationusing the third resist film 16 as a mask.

The second p well 18 is formed by ion implantation of boron as a p-typeimpurity into the semiconductor substrate 1 from the four directionstilted with respect to the substrate normal direction under thecondition where the acceleration energy is 150 keV and the dose amountis 7.5×10¹² cm⁻².

Meanwhile, the second p-type impurity region 20 functions to adjust thethreshold voltage of a transistor to be formed later in the secondn-type transistor formation region II_(n), and is formed by ionimplantation of boron into the semiconductor layer 28. The condition ofthe ion implantation is that, for example, the acceleration energy is 10keV and the dose amount is 2×10¹² cm⁻².

Here, in order to suppress segregation of boron in the upper surface 28x of the semiconductor layer 28, it is preferable that the concentrationof boron in the upper surface 28 x be set as high as possible bypositioning the concentration peak of boron as close as possible to theupper surface 28 x of the semiconductor layer 28.

In the present embodiment, different from the step of FIG. 1D, after thesemiconductor layer 28 is formed, the second p-type impurity region 20is formed in this semiconductor layer 28. Accordingly, the condition ofion implantation into the second p-type impurity region 20 is adjustedto easily set the concentration peak of boron in the vicinity of theupper surface 28 x.

Moreover, the second p-type impurity region 20 is formed after theelement isolation trenches 1 b are formed. Accordingly, boron in thesecond p-type impurity region 20 may not be diffused due to the heatduring the formation of the element isolation trenches 1 b, for example,the heat during the formation of the oxide film 30. Therefore, it ispossible to maintain a state where the concentration peak of boron ispositioned in the upper surface 28 x of the semiconductor layer 28.

Thereafter, the third resist film 16 is removed.

Next, as illustrated in FIG. 6E, the fourth resist film 22 is formed onthe oxide film 30 by photolithography. Thereafter, the second n well 24and the second n-type impurity region 26 are formed in the second p-typetransistor formation region II_(p) by ion implantation using the fourthresist film 22 as a mask.

The second n well 24 is formed by ion implantation of phosphorus as ann-type impurity into the semiconductor substrate 1 from the fourdirections tilted with respect to the substrate normal direction underthe condition where the acceleration energy is 360 keV and the doseamount is 7.5×10¹² cm⁻².

Moreover, the second n-type impurity region 26 functions to adjust thethreshold voltage of a transistor to be formed later in the secondp-type transistor formation region II_(p), and is formed by ionimplantation of arsenic as an n-type impurity into the semiconductorlayer 28. The implantation condition of the arsenic is that, forexample, the acceleration energy is 100 keV and the dose amount is1×10¹² cm⁻².

Thereafter, the fourth resist film 22 is removed.

Next, as illustrated in FIG. 6F, the oxide film 30 remaining on thesemiconductor layer 28 is removed by wet etching with a hydrofluoricacid solution.

Then, the same steps as FIGS. 1K to 1R stated above are performed tocomplete the basic structure of the semiconductor device according tothe present embodiment illustrated in FIG. 6G.

According to the present embodiment explained above, as having explainedwith reference to FIG. 6D, after the semiconductor layer 28 is formed,the second p-type impurity region 20 is formed by ion implantation ofboron into this semiconductor layer 28.

Next, examination performed the inventor of the present application inorder to confirm effects by the present embodiment will be explained.

In the examination, the third MOS transistor 83 made in accordance withFIGS. 1A to 1R stated above was used as a comparative example, and Vg-Idcurves of the third MOS transistors 83 according to the comparativeexample and Vg-Id curves of the third MOS transistors 83 according tothe present embodiment were examined.

FIGS. 7A and 7B illustrate results of the examination.

FIG. 7A illustrates the Vg-Id curves in the comparative example, andFIG. 7B illustrates the Vg-Id curves in the present embodiment.

Note that, in both of the comparative example and the presentembodiment, the third MOS transistor 83 has a gate length of 0.34 μm anda gate width of 20 μm.

Moreover, the Vg-Id curves of a plurality of the third MOS transistors83 in both cases where the voltage Vbb applied to the second p well 18is 0.0 V and −3.3 V are acquired.

In addition, in both of the comparative example and the presentembodiment, the acceleration energy of boron in forming the secondp-type impurity region 20 is set to 10 keV.

As illustrated in FIG. 7A, a hump appears in the comparative example.

In contrast, in the present embodiment, as illustrated in FIG. 7B, theheight of a crest on the Vg-Id curve is reduced. A hump is moresuppressed than that in the comparative example.

From this, it is confirmed that forming the second p-type impurityregion 20 after the semiconductor layer 28 and the element isolationtrenches 1 b are formed as in the present embodiment is effective forsuppressing a hump of the third MOS transistor 83 serving as a PMOStransistor.

Here, a possible reason why a hump can be suppressed in this manner isthat the peak of the concentration of boron in the second p-typeimpurity region 20 is positioned in the vicinity of the upper surface 28x of the semiconductor layer 28, and therefore the concentration ofboron is high in the upper surface 28 x.

In order to increase the concentration of boron in the upper surface 28x, it is considered effective to reduce the acceleration energy of thep-type impurity in forming the second p-type impurity region 20, therebyto make the concentration peak of the p-type impurity much closer to theupper surface 28 x.

In the present embodiment of FIG. 7B, the acceleration energy of boronin forming the second p-type impurity region 20 is set to 10 keV.Accordingly, the acceleration energy of boron is set to 10 keV or lessto allow the concentration peak of the p-type impurity to be made to befurther closer to the upper surface 28 x.

Moreover, examples of a p-type impurity for forming a second p-typeimpurity region 20 include BF₂ in addition to boron described above.

FIG. 8 illustrates Vg-Id curves of the third MOS transistors 83 in acase where BF₂ is used as a p-type impurity in forming the second p-typeimpurity region 20 and the acceleration energy of the BF₂ is set to 15keV in the present embodiment.

Note that, the Vg-Id curves of a plurality of the third MOS transistors83 in both cases where the voltage Vbb applied to the second p well 18is 0.0 V and −3.3 V are acquired. In addition, the gate length and thegate width of each of the third MOS transistors 83 are set to 0.34 μmand 30 μm, respectively.

Because BF₂ has a larger mass than boron, the depth at which BF₂ isimplanted at the acceleration energy described above (15 keV) isshallower than the depth at which boron is implanted at the sameacceleration energy, and is substantially equivalent to the depth atwhich boron is implanted at the energy of 10 keV or less.

As illustrated in FIG. 8, in this case, a crest appeared on the Vg-Idcurve becomes further lower than the case of FIG. 7B. Accordingly, nohump is generated.

From this, in a case where BF₂ is used as a p-type impurity in formingthe second p-type impurity region 20, it is revealed that theacceleration energy of the BF₂ set to 15 keV or less enables suppressionof a hump.

FIG. 9 illustrates a concentration profile of impurity of thesemiconductor layer 28 in the second n-type transistor formation regionII_(n), and is a graph indicating a relation between the depth from theupper surface 28 x and the concentration of a p-type impurity.

In FIG. 9, a first embodiment I indicates a concentration profile ofboron in a case where the boron is ion implanted at the accelerationenergy of 10 keV in order to form the second p-type impurity region 20.Further, a first embodiment II indicates a concentration profile of BF₂in a case where the BF₂ is ion implanted at the acceleration energy of15 keV in order to form the second p-type impurity region 20. Inaddition, the comparative example indicates a concentration profile ofboron in the comparative example of FIG. 7A.

As illustrated in FIG. 9, the profile of the comparative example has thelowest impurity concentration in the upper surface 28 x among the threeprofiles.

Meanwhile, in order to obtain a further higher-performance semiconductordevice, not only a hump of the third MOS transistor 83 which is drivenat a high voltage but also a hump of the first MOS transistor 81 whichis driven at a low voltage is preferably suppressed.

Therefore, a method of suppressing a hump of the first MOS transistor 81made in accordance with the present embodiment will be explained below.

As described earlier, the first MOS transistor 81 is a PMOS transistor,and the threshold voltage is adjusted in the first p-type impurityregion 8 (see FIG. 1Q). Further, carbon is also ion implanted into thesemiconductor substrate 1 when the first p-type impurity region 8 isformed, and the carbon can suppress diffusion of boron in the firstp-type impurity region 8.

The inventor of the present application examined how the Vg-Id curve ofthe first MOS transistor 81 is changed depending on the dose amount ofcarbon ion-implanted in this manner.

FIGS. 10A to 10C illustrate results of the examination.

Among them, FIG. 10A illustrates Vg-Id curves in a case where theacceleration energy of carbon is set to 3 keV and the dose amount is setto 1.0×10¹⁴ cm⁻² in the formation of the first p-type impurity region 8.

Moreover, FIG. 10B illustrates Vg-Id curves in a case where theacceleration energy of carbon is set to 3 keV and the dose amount is setto 2.0×10¹⁴ cm⁻², and FIG. 10C illustrates Vg-Id curves in a case wherethe acceleration energy of carbon is set to 3 keV and the dose amount isset to 3.0×10¹⁴ cm⁻².

Note that, in any of FIGS. 10A to 10C, the gate length of the first MOStransistor 81 is set to 1.03 μm and the gate width is set to 1 μm. Inaddition, the Vg-Id curves of a plurality of the first MOS transistors81 in both cases where the voltage Vbb applied to the first p well 6(see FIG. 1Q) is 0.0 V and −0.9 V are acquired.

As illustrated in FIG. 10A, a hump appears in the case where the doseamount of carbon is 1.0×10¹⁴ cm⁻².

Meanwhile, as illustrated in FIG. 10B, if the dose amount of carbon isincreased to 2.0×10¹⁴ cm⁻², a hump is reduced. In addition, asillustrated in FIG. 10C, if the dose amount of carbon is increased to3.0×10¹⁴ cm⁻², a hump is almost dissolved.

FIG. 11 is a graph obtained as a result of examination of how theconcentration profile of boron in the first p-type impurity region 8depends on the condition of ion implantation of carbon described above.

Note that, in the examination, as the dose amount of boron (B) informing the first p-type impurity region 8, two different dose amountsof 3.0×10¹³ cm⁻² and 6.0×10¹³ cm⁻² are used. Further, different doseamounts of carbon (C) are used with each of these two different doseamounts.

As illustrated in FIG. 11, in a case (C) where carbon is ion implantedat the high dose amount of 3.0×10¹⁴ cm⁻², the carbon suppressesdiffusion of boron to keep the concentration of boron in the uppersurface 28 x of the semiconductor layer 28 low at about 1×10¹⁷ atms/cc.

In particular, in this case (C), the concentration of boron of thesemiconductor layer 28 from the upper surface 28 x of the semiconductorlayer 28 to at least a portion having a depth of half of the filmthickness of the semiconductor layer 28 may be kept low at 3×10¹⁷atms/cc or less.

Meanwhile, in the remaining three cases (A), (B), and (D) where the doseamount of carbon is lower than 3.0×10¹⁴ cm⁻² described above, boron isdiffused to cause the concentration of boron in the upper surface 28 xto be increased to about 1×10¹⁸ atms/cc.

These results revealed that, in order to dissolve a hump of the firstMOS transistor 81, it is effective to increase the dose amount of carbonin forming the first p-type impurity region 8 as much as possible.

Note that, instead of increasing the dose amount of carbon in thismanner, boron may be prevented from being diffused from the first p-typeimpurity region 8 into the upper surface 28 x of the semiconductor layer28 by forming the semiconductor layer 28 in such a manner to have athicker film thickness as described below.

FIGS. 12A to 12D are graphs indicating Vg-Id curves of the first MOStransistors 81 obtained by varying the film thickness of thesemiconductor layer 28.

Note that, the first MOS transistor 81 used for acquiring the Vg-Idcurves has a gate length of 1.01 μm and a gate width of 1 μm. Moreover,the Vg-Id curves of a plurality of the first MOS transistors 81 in bothcases where the voltage Vbb applied to the first p well 6 (see FIG. 1Q)is 0.0 V and 0.9 V are acquired.

FIG. 12A is a graph indicating Vg-Id curves in a case where the filmthickness of the semiconductor layer 28 is set to 15 nm. In this case, ahump appears on the Vg-Id curves.

FIG. 12B is a graph indicating Vg-Id curves in a case where the filmthickness of the semiconductor layer 28 is set to 20 nm. Also in thiscase, a hump appears on the Vg-Id curves.

Meanwhile, FIG. 12C is a graph indicating Vg-Id curves in a case wherethe film thickness of the semiconductor layer 28 is set to 25 nm. Inthis case, a hump is disappeared from the Vg-Id curves.

Moreover, FIG. 12D is a graph indicating Vg-Id curves in a case wherethe film thickness of the semiconductor layer 28 is set to 30 nm. Alsoin this case, a hump is disappeared.

These results revealed that, a hump of the first MOS transistor 81 isfurther suppressed as the film thickness of the semiconductor layer 28increases, and setting the film thickness of the semiconductor layer 28to 25 nm or more to cause a hump to be almost completely disappeared.

Second Embodiment

In the first embodiment, as illustrated in FIG. 6D and FIG. 6E, theimpurity such as boron, phosphorus, or the like is introduced into thesemiconductor layer 28 of the third MOS transistor 83 or the fourth MOStransistor 84 which is driven at a high voltage.

In the present embodiment, an MOS transistor which is provided with anon-doped semiconductor layer 28 and driven at a high voltage is alsomounted together, in addition to the MOS transistor provided with thesemiconductor layer 28 with which the impurity is doped in this manner.

FIGS. 13A to 13Q are cross-sectional views of semiconductor devices inthe course of manufacturing semiconductor devices according to thepresent embodiment. Note that, in FIGS. 13A to 13Q, like numerals referto like components which have been explained in FIGS. 1A to 1R, andexplanations are omitted below.

Firstly, as illustrated in FIG. 13A, a silicon substrate provided withfirst to third regions I to III is prepared as the semiconductorsubstrate 1.

Among these regions, the third region III is a region where an MOStransistor which uses a non-doped semiconductor layer as a channel andis driven at a high voltage is to be formed, and is subdivided into athird p-type transistor formation region III_(p) and a third n-typetransistor formation region III_(n).

Further, the oxide film 2 is formed on the upper surface 1 x of thesemiconductor substrate 1 in a similar manner to the first embodiment.

Next, as illustrated in FIG. 13B, a sixth resist film 87 is formed onthe oxide film 2 by photolithography.

Further, the first p well 6 is formed in the first n-type transistorformation region I_(n) and a third p well 88 is simultaneously formed inthe third n-type transistor formation region III_(n) by ion implantationusing the sixth resist film 87 as a mask.

The condition of the ion implantation is not specially limited. In thepresent embodiment, boron as a p-type impurity is ion implanted into thesemiconductor substrate 1 from the four directions tilted with respectto the substrate normal direction under the condition where theacceleration energy is 150 keV and the dose amount is 7.5×10¹² cm⁻².

Thereafter, the sixth resist film 87 is continuously used as a mask toform the first p-type impurity region 8 and a third p-type impurityregion 89 in the first n-type transistor formation region I_(n) and thethird n-type transistor formation region III_(n) respectively.

These p-type impurity regions 8 and 89 function to adjust the thresholdvoltage of the transistors, and are formed by ion implantation ofgermanium, carbon, and a p-type impurity in this order.

Among them, the ion implantation of germanium is performed under thecondition where the acceleration energy is 50 keV and the dose amount is5×10¹⁴ cm⁻², for example, and the ion implantation of carbon isperformed under the condition where the acceleration energy is 5 keV andthe dose amount is 5×10¹⁴ cm⁻², for example. Further, in the ionimplantation of the p-type impurity, for example, boron is implantedunder the condition where the acceleration energy is 20 keV and the doseamount is 0.9×10¹³ cm⁻², and successively, boron is implanted under thecondition where the acceleration energy is 10 keV and the dose amount is1×10¹³ cm⁻². In addition, as the p-type impurity, boron difluoride (BF₂)is implanted at under the condition where the acceleration energy is 10keV and the dose amount is 0.7×10¹³ cm⁻².

As described earlier, the carbon which is ion implanted in this stepfunctions to prevent boron included in each of the first p-type impurityregion 8 and the third p-type impurity region 89 from being diffused.Note that, as an alternative to the boron, BF₂ may be used as a p-typeimpurity.

Thereafter, the sixth resist film 87 is removed.

Next, as illustrated in FIG. 13C, a seventh resist film 90 is formed onthe oxide film 2 by photolithography, and boron difluoride is ionimplanted into the first n-type transistor formation region I_(n) usingthe seventh resist film 90 as a mask to increase the impurityconcentration in the first p-type impurity region 8.

As for the condition of the ion implantation, for example, the conditionwhere the acceleration energy is 10 keV and the dose amount is 0.4×10¹³cm⁻² may be employed.

Thereafter, the seventh resist film 90 is removed.

Subsequently, as illustrated in FIG. 13D, an eighth resist film 91 isformed on the oxide film 2 by photolithography.

Further, the first n well 12 is formed in the first p-type transistorformation region I_(p) and a third n well 92 is simultaneously formed inthe third p-type transistor formation region III_(p), by ionimplantation using the eighth resist film 91 as a mask.

The condition of the ion implantation is not specially limited.Phosphorus as an n-type impurity is ion implanted into the semiconductorsubstrate 1 from the four directions tilted with respect to thesubstrate normal direction under the condition where the accelerationenergy is 360 keV and the dose amount is 7.5×10¹² cm⁻².

Thereafter, the n-type impurity is ion implanted into the semiconductorlayer 28 continuously using the eighth resist film 91 as a mask to formthe first n-type impurity region 14 and a third n-type impurity region93 in the first p-type transistor formation region I_(p) and the thirdp-type transistor formation region III_(p), respectively.

Of these impurity regions, the third n-type impurity region 93 functionsto adjust the threshold voltage of a transistor to be formed later inthe third p-type transistor formation region III_(p), and is formed byion implantation of antimony as an n-type impurity. The antimony isimplanted at a plurality of times under the following conditions. Thefirst implantation condition is that the acceleration energy is 130 keVand the dose amount is 0.6×10¹³ cm⁻², and the second implantationcondition is that the acceleration energy is 80 keV and the dose amountis 0.9×10¹³ cm⁻². Further, the third implantation condition is that theacceleration energy is 20 keV and the dose amount is 0.8×10¹³ cm⁻².

Thereafter, the eighth resist film 91 is removed.

Next, as illustrated in FIG. 13E, after a ninth resist film 100 isformed on the oxide film 2 by photolithography, the concentration of ann-type impurity in the first n-type impurity region 14 is increased byion implantation using the ninth resist film 100 as a mask. As then-type impurity, for example, antimony may be implanted at theacceleration energy of 20 keV and the dose amount of 5×10¹² cm⁻².

Thereafter, the ninth resist film 100 is removed.

Next, thermal treatment is performed at 600° C. for 150 seconds in anitrogen atmosphere on the semiconductor substrate 1 to recrystallize anamorphous layer generated in the semiconductor substrate 1 by the ionimplantation of the germanium described above. Next, in a nitrogenatmosphere, thermal treatment is performed on the semiconductorsubstrate 1 at 1000° C. for 0.1 second or less.

Next, as illustrated in FIG. 13F, the oxide film 2 is removed by wetetching with a hydrofluoric acid solution. Further, on the upper surface1 x of the semiconductor substrate 1, a silicon layer serving as thesemiconductor layer 28 is formed in such a manner to have a thickness ofabout 25 nm by an epitaxial growth method. In the epitaxial growthmethod, a mixed gas of a silane gas and a hydrogen gas is used as adeposition gas.

Subsequently, as illustrated in FIG. 13G, the same steps as FIGS. 1G to1J stated above are performed to form an oxidized silicon film servingas the element isolation insulating film 34 in the element isolationtrenches 1 b of the semiconductor substrate 1, and to be in a statewhere the oxide film 30 having a thickness about 3 nm is remained on thesemiconductor layer 28.

Note that, because the element isolation trenches 1 b are provided inorder to electrically isolate the regions I_(n), I_(p), II_(n), II_(p),III_(n), and III_(p) from one another, the element isolation trenches 1b are formed between the regions I_(n), I_(p), II_(n), II_(p), III_(n),and III_(p).

Thereafter, as illustrated in FIG. 13H, a tenth resist film 101 isformed on the oxide film 30 by photolithography. Further, the second pwell 18 and the second p-type impurity region 20 are formed in thesecond n-type transistor formation region II_(n) by ion implantationusing the tenth resist film 101 as a mask.

The second p well 18 is formed by ion implantation of boron as a p-typeimpurity into the semiconductor substrate 1 from the four directionstilted with respect to the substrate normal direction under thecondition where the acceleration energy is 150 keV and the dose amountis 7.5×10¹² cm⁻² under the condition.

Meanwhile, the second p-type impurity region 20 is formed by ionimplantation of BF₂ as a p-type impurity into the semiconductor layer28. The condition of the ion implantation is that, for example, theacceleration energy is 15 keV and the dose amount is 3×10¹² cm⁻².

The acceleration energy (15 keV) to BF₂ is identical with theacceleration energy used in the examination of FIG. 8. As havingexplained with reference to FIG. 8, using this acceleration energy makesit possible to effectively suppress a hump of the third MOS transistor83 formed later in the second n-type transistor formation region II_(n).

Thereafter, the tenth resist film 101 is removed.

Next, as illustrated in FIG. 13I, an eleventh resist film 102 is formedon the oxide film 30 by photolithography. Thereafter, the second n well24 and the second n-type impurity region 26 are formed in the secondp-type transistor formation region II_(p) by ion implantation using theeleventh resist film 102 as a mask.

The second n well 24 is formed by ion implantation of phosphorus as ann-type impurity into the semiconductor substrate 1 from the fourdirections tilted with respect to the substrate normal direction underthe condition where the acceleration energy is 360 keV and the doseamount is 7.5×10¹² cm⁻².

Moreover, the second n-type impurity region 26 is formed by ionimplantation of arsenic as an n-type impurity into the semiconductorlayer 28. The implantation condition of the arsenic is that, forexample, the acceleration energy is 100 keV and the dose amount is1×10¹² cm⁻².

Thereafter, the eleventh resist film 102 is removed.

Next, as illustrated in FIG. 13J, after the oxide film 30 is wet etchedwith a hydrofluoric acid solution, the surface of the semiconductorlayer 28 is thermal oxidized to form the first thermal oxide film 36having a thickness of approximately 7 nm. The condition of the thermaloxidization is not specially limited. In the present embodiment, thefirst thermal oxide film 36 is formed under the condition where thesubstrate temperature is at 750° C. and the thermal treatment time isfor 52 minutes.

Next, as illustrated in FIG. 13K, a twelfth resist film 103 which coversthe second region II and the third region III is formed on the firstthermal oxide film 36. Further, the twelfth resist film 103 is used as amask to remove the first thermal oxide film 36 in the first region I bywet etching with a hydrofluoric acid solution.

After completion of the wet etching, the twelfth resist film 103 isremoved.

Thereafter, as illustrated in FIG. 13L, the surface of the semiconductorlayer 28 is thermally oxidized again by RTO to from the second thermaloxide film 40 having a thickness of about 2 nm in the first region I. Asfor the deposition condition of the second thermal oxide film 40, forexample, the condition where the substrate temperature is at 810° C. andthe thermal treatment time is for eight seconds may be employed.

In this step, the thickness of the first thermal oxide film 36 isincreased due to the thermal oxidization. Accordingly, the first thermaloxide film 36 having a film thickness thicker than the second thermaloxide film 40 is obtained. Note that, a portion of the first thermaloxide film 36 which is formed in the third region III is an example of athird gate insulating film.

Next, as illustrated in FIG. 13M, each polycrystalline silicon filmhaving a film thickness of about 100 nm is formed on each of the firstthermal oxide film 36 and the second thermal oxide film 40 by the CVDmethod. Further, the polycrystalline silicon films are patterned to formfirst to third gate electrodes 42 a to 42 c in the first to thirdregions I to III, respectively.

Next, steps to obtain a cross-sectional structure illustrated in FIG.13N will be explained.

Firstly, phosphorus as an n-type impurity is ion implanted into thesecond n-type transistor formation region II_(n) to form the secondn-type extensions 48 at both sides of the second gate electrode 42 b inthe semiconductor layer 28.

In the ion implantation, phosphorus is ion implanted also into the thirdn-type transistor formation region III_(n). Accordingly, the secondn-type extensions 48 are also formed at both sides of the third gateelectrode 42 c in the semiconductor layer 28 in the region III_(n).

The condition of the ion implantation is not specially limited. In thepresent embodiment, the ion implantation is performed under thecondition where the acceleration energy is 35 keV and the dose amount is3×10¹³ cm⁻².

Next, arsenic as an n-type impurity is ion implanted into the firstn-type transistor formation region I, to form the first n-typeextensions 44 at both sides of the first gate electrode 42 a in thesemiconductor layer 28. The condition of the ion implantation is that,for example, the acceleration energy is 1 keV and the dose amount is8×10¹⁴ cm⁻².

Subsequently, boron as a p-type impurity is ion implanted into the firstp-type transistor formation region I_(p), the second p-type transistorformation region II_(p), and the third p-type transistor formationregion III_(p) under the condition where the acceleration energy is 0.3keV and the dose amount is 4×10¹⁴ cm⁻². With this manner, the firstp-type extensions 46, the second p-type extensions 50, and third p-typeextensions 51 are formed to at both sides of the first gate electrode 42a, the second gate electrode 42 b, and the third gate electrode 42 c inthe semiconductor layer 28, respectively.

Note that, the p-type impurity and the n-type impurity described aboveare separately ion implanted using resist films which are notillustrated.

Next, as illustrated in FIG. 13O, an insulating film is formed in eachof the first to third regions I to III, and the insulating film isetched back by RIE leaving the insulating film on sides of each of thefirst to third gate electrodes 42 a to 42 c as the insulating side walls60. The insulating film is, for example, an oxidized silicon film havinga film thickness of approximately 80 nm and formed at the substratetemperature of 520° c.

Note that, in the etching back, portions of the first thermal oxide film36 and the second thermal oxide film 40 which are not covered by thefirst to third gate electrodes 42 a to 42 c and the insulating sidewalls 60 are also etched. Accordingly, after the completion of theetching back, the surface of the semiconductor layer 28 is exposed.

Next, steps to obtain a cross-sectional structure illustrated in FIG.13P will be explained.

Firstly, phosphorus as an n-type impurity is ion implanted into each ofthe first n-type transistor formation region I_(n), the second n-typetransistor formation region II_(n), and the third n-type transistorformation region III_(n).

With this manner, first to third n-type source regions 62, 70, and 95and first to third n-type drain regions 64, 72, and 96 are formed in therespective regions I_(n) to III_(n) of the semiconductor substrate 1.

As for the condition of the ion implantation, for example, the conditionwhere the acceleration energy is 8 keV and the dose amount is 1.2×10¹⁶cm⁻² may be employed.

Next, boron as a p-type impurity is ion implanted into each of the firstp-type transistor formation region I_(p), the second p-type transistorformation region II_(p), and the third p-type transistor formationregion III_(p).

With this manner, first to third p-type source regions 66, 74, and 98and first to third p-type drain regions 68, 76, and 99 are formed in therespective regions I_(p) to III_(p) of the semiconductor substrate 1.

As for the condition of the ion implantation, for example, the conditionwhere the acceleration energy is 4 KeV and the dose amount is 6×10¹⁵cm⁻² may be employed.

Thereafter, the semiconductor substrate 1 is subjected to RTA (RapidThermal Anneal) under the condition where the substrate temperature isat 1025° c. to activate the impurities.

With the foregoing steps, the basic structures of fifth and sixthtransistors 105 and 106 provided with the third gate electrodes 42 c inthe third region III, together with the first to fourth MOS transistors81 to 84 explained in the first embodiment, are completed.

Among these transistors, the fifth MOS transistor 105 is an NMOStransistor, and the sixth MOS transistor 106 is a PMOS transistor.

Moreover, the fifth and sixth MOS transistors 105 and 106 are driven ata voltage higher than that of the first and second MOS transistors 81and 82. Accordingly, the first thermal oxide film 36 provided for thesegate insulating films has a film thickness thicker than the secondthermal oxide film 40.

Then, the contact plug 80 and the copper wiring 85 are formed asillustrated in FIG. 13Q by performing the same steps as FIG. 1R tocomplete the basic structure of the semiconductor device according tothe present embodiment.

With the present embodiment explained above, as illustrated in FIG. 13P,the fifth MOS transistor 105 serving as an NMOS transistor is formed inthe third region III.

Although the fifth MOS transistor 105 is provided with the third p-typeimpurity region 89, carbon to suppress diffusion of boron is also ionimplanted when the third p-type impurity region 89 is formed.Accordingly, the slightly small amount of boron is diffused into thethird p-type impurity region 89.

In addition, in the third region III, the step of ion implanting theimpurity into the semiconductor layer 28 is not performed between theperiod after the semiconductor layer 28 is formed and before the thirdgate electrodes 42 c are formed. Accordingly, the fifth MOS transistor105 in the third region III uses the semiconductor layer 28 with theupper surface 28 x in which boron is not substantially included and withthe low impurity concentration, as a channel.

FIG. 14 illustrates a concentration profile of impurity of thesemiconductor layer 28 in the third n-type transistor formation regionIII_(n), and is a graph indicating a relation between the depth from theupper surface 28 x of the semiconductor layer 28 and the concentrationof a p-type impurity.

Note that, in FIG. 14, the concentration profiles of the firstembodiment I, the first embodiment II, and the comparative example whichare illustrated in FIG. 9 are also illustrated for comparison, inaddition to the concentration profile of boron according to the presentembodiment.

As illustrated in FIG. 14, the concentration profile of the presentembodiment has the lowest impurity concentration in the upper surface 28x of the semiconductor layer 28 among the concentration profiles, andthe p-type impurity is not substantially included in the upper surface28 x in the present embodiment.

In this manner, the semiconductor layer 28 with the low impurityconcentration is used as a channel. Accordingly, a hump is less likelyto be generated in the fifth MOS transistor 105 according to the presentembodiment, as similar to the first MOS transistor in the firstembodiment. In particular, because an analog circuit is affected by thevariation of the threshold voltage of the MOS transistor, it iseffective to use the MOS transistor 105 in which both of impurityvariation (RDF) and a hump are suppressed.

Meanwhile, in the third MOS transistor 83 and the fourth MOS transistor84 which are mounted together with the fifth MOS transistor 105, animpurity is implanted into the semiconductor layer 28 used as a channel.The structure in which the impurity is implanted into the channel inthis manner is identical with that of an MOS transistor in which thesemiconductor layer 28 is not formed, and an impurity is implanted intothe surface layer of the semiconductor substrate 1 to use the surfacelayer portion as a channel. Such MOS transistors are widely used.Therefore, an advantage of capable of using the third MOS transistor 83and the fourth MOS transistor 84 in an existing circuit without thedesign of the circuit being changed may be obtained in the presentembodiment.

All examples and conditional language recited herein are intended forthe pedagogical purposes of aiding the reader in understanding theinvention and the concepts contributed by the inventor to further theart, and are not to be construed as limitations to such specificallyrecited examples and conditions, nor does the organization of suchexamples in the specification relate to a showing of the superiority andinferiority of the invention. Although one or more embodiments of thepresent invention have been described in detail, it should be understoodthat the various changes, substitutions, and alterations could be madehereto without departing from the spirit and scope of the invention.

What is claimed is:
 1. A manufacturing method of a semiconductor device,comprising: implanting a first impurity into a first region of asemiconductor substrate including the first region and a second region;forming a semiconductor layer on the upper surface of the semiconductorsubstrate; forming a trench in the semiconductor layer and thesemiconductor substrate; forming an isolation insulating film in thetrench; implanting a second impurity into the semiconductor layer in thesecond region; forming a first gate insulating film on the semiconductorlayer in the first region; forming a second gate insulating film on thesemiconductor layer in the second region; forming a first gate electrodeon the first gate insulating film; forming a second gate electrode onthe second gate insulating film; forming a first source region and afirst drain region in the semiconductor layer at both sides of the firstgate electrode, the first source region and the first drain regionhaving a conductivity type opposite to a conductivity type of the firstimpurity; and forming a second source region and a second drain regionin the semiconductor layer at both sides of the second gate electrode,the second source region and the second drain region having aconductivity type opposite to a conductivity type of the secondimpurity.
 2. The manufacturing method of the semiconductor deviceaccording to claim 1, wherein implanting the second impurity isperformed after forming the isolation insulating film.
 3. Themanufacturing method of the semiconductor device according to claim 1,wherein in the implanting of the second impurity, a concentration peakof the second impurity is positioned in the semiconductor layer.
 4. Themanufacturing method of the semiconductor device according to claim 3,wherein implanting the second impurity includes implanting of BF₂ intothe semiconductor layer at the acceleration energy of 15 keV or less. 5.The manufacturing method of the semiconductor device according to claim3, wherein implanting the second impurity includes implanting boron intothe semiconductor layer at the acceleration energy of 10 keV or less. 6.The manufacturing method of the semiconductor device according to claim1, wherein between the formation of the semiconductor layer and theformation of the first gate electrode, implanting an impurity into thesemiconductor layer in the first region is not performed.
 7. Themanufacturing method of the semiconductor device according to claim 6,wherein the first impurity is boron or BF₂, and the manufacturing methodof the semiconductor device further comprise: implanting carbon into thefirst region of the semiconductor substrate.
 8. The manufacturing methodof the semiconductor device according to claim 1, wherein in the formingof the second gate insulating film, the second gate insulating film isthicker than the first gate insulating film.
 9. The manufacturing methodof the semiconductor device according to claim 1, wherein thesemiconductor layer is a silicon layer formed by an epitaxial growthmethod.
 10. The manufacturing method of the semiconductor deviceaccording to claim 9, wherein the semiconductor layer has a thickness of25 nm or more.
 11. The manufacturing method of the semiconductor deviceaccording to claim 1, wherein the trench is formed between the firstregion and the second region.
 12. The manufacturing method of thesemiconductor device according to claim 1, wherein the semiconductorsubstrate further includes a third region, and the manufacturing methodof the semiconductor device further comprises: implanting a thirdimpurity into the third region of the semiconductor substrate; forming athird gate insulating film on the semiconductor layer in the thirdregion; forming a third gate electrode on the third gate insulatingfilm; and forming a third source region and a third drain region in thesemiconductor layer at both sides of the third gate electrode, the thirdsource region and the third drain region having a conductivity typeopposite to a conductivity type of the third impurity.
 13. Themanufacturing method of the semiconductor device according to claim 12,wherein between the formation of the semiconductor layer and theformation of the third gate electrode, implanting an impurity into thesemiconductor layer in the third region is not performed.
 14. Themanufacturing method of the semiconductor device according to claim 13,wherein the third impurity is boron or BF₂, and the manufacturing methodof the semiconductor device further comprises: implanting carbon intothe third region of the semiconductor substrate.
 15. A semiconductordevice, comprising: a semiconductor substrate including a first regionand a second region; a semiconductor layer formed on the upper surfaceof the semiconductor substrate; a first impurity region formed in thefirst region of the semiconductor substrate and including a firstimpurity; a second impurity region formed in the second region of thesemiconductor layer and including a second impurity; a first gateinsulating film formed on the semiconductor layer in the first region; asecond gate insulating film formed on the semiconductor layer in thesecond region; a first gate electrode formed on the first gateinsulating film; a second gate electrode formed on the second gateinsulating film; a first source region and a first drain region formedin the semiconductor layer at both sides of the first gate electrode,and having a conductivity type opposite to a conductivity type of thefirst impurity region; and a second source region and a second drainregion formed in the semiconductor layer at both sides of the secondgate electrode, and having a conductivity type opposite to aconductivity type of the second impurity region, and wherein aconcentration peak of the second impurity in the second impurity regionis positioned in the semiconductor layer.
 16. The semiconductor deviceaccording to claim 15, wherein the second gate insulating film isthicker than the first gate insulating film.
 17. The semiconductordevice according to claim 15, wherein the semiconductor layer has afirst film thickness, and a concentration of the first impurity is3×10¹⁷ atoms/cc or less in the first region from the upper surface ofthe semiconductor layer to at least a portion having a depth of half ofthe first film thickness.
 18. The semiconductor device according toclaim 17, wherein the first impurity is boron or BF₂, and carbon isincluded in the semiconductor substrate in the first region.
 19. Thesemiconductor device according to claim 15, further comprising: a thirdimpurity region formed in a third region of the semiconductor substrateand including a third impurity; a third gate insulating film formed onthe semiconductor layer in the third region; a third gate electrodeformed on the third gate insulating film; and a third source region anda third drain region formed in the semiconductor layer at both sides ofthe third gate electrode, and having a conductivity type opposite tothat of the third impurity region, wherein in the third region, thethird impurity is not substantially included in the upper surface of thesemiconductor layer.
 20. The semiconductor device according to claim 19,wherein the third impurity is boron or BF₂, and carbon is included inthe semiconductor substrate in the third region.